Semiconductor device

ABSTRACT

A semiconductor device includes a conductive support member, a control element, an insulating element, a driver element and a sealing resin. The conductive support member includes a first lead and a second lead. The first lead has a first pad portion. The second lead has a second pad portion. The second pad portion is adjacent to the first pad portion in a first direction perpendicular to a thickness direction of the first pad portion. The control element is mounted on the first pad portion. The insulating element is mounted on the first pad portion and electrically connected to the control element. The driver element is mounted on the second pad portion and electrically connected to the insulating element. The sealing resin covers the first pad portion, the second pad portion, the control element, the insulating element and the driver element. As viewed in the thickness direction, the first pad portion has a first edge adjacent to the second pad portion in the first direction and extending in a second direction perpendicular to the thickness direction and the first direction. The first edge has a first end and a second end opposite in the second direction. As viewed in the thickness direction, the second pad portion has a second edge adjacent to the first edge in the first direction and extending in the second direction. The second edge has a third end and a fourth end opposite in the second direction. One of the third end and the fourth end is located between the first end and the second end in the second direction.

TECHNICAL FIELD

The present disclosure relates to a semiconductor device including acontrol element, a driver element and an insulating element electricallyconnected to the control element and the driver element.

BACKGROUND ART

Semiconductor devices for driving switching elements, such as IGBTs andMOSFETs, are widely known (as gate drivers). Patent document 1 disclosesa semiconductor device including a driver element that outputs a gatevoltage for driving a switching element, a control element thattransmits an electric signal used as a base for generating the gatevoltage to the driver element, and an insulating element electricallyconnected to the driver element and the control element.

The insulating element of the semiconductor device includes a pair ofcoils (inductors). One of the coils converts an electric signaltransmitted from the control element into magnetic force. The other coilconverts the magnetic force into an electric signal of a greaterpotential difference than the electric signal transmitted from thecontrol element. The resulting electric signal is then transmitted tothe driver element. The source voltage supplied to the driver element(about 600 volts or higher) is significantly higher than the sourcevoltage supplied to the control element (about 5 volts). The insulatingelement enables transmission of electric signals between the controlelement and the driver element that are electrically insulated from eachother, so that the control element is protected from a relatively highvoltage.

In recent years, such semiconductor devices have been sought to be morecompact for use in electrically-powered vehicles. The semiconductordevices are typically provided in resin packages formed by molding. Amore compact semiconductor device means that a smaller volume of sealingresin is present between the low voltage section, which includes thecontrol element, and the high voltage section, which includes the driverelement. This may lower the dielectric strength of the semiconductordevice. During the manufacture of the semiconductor device, in addition,wires connecting the control element or the driver element to conductivemembers, such as leads, may be pushed by the flow of synthetic resininjected for forming the sealing resin. As a result, the wires may belocated too close to the insulating element, which can be another factorpossibly reducing the dielectric strength of the semiconductor device.

PRIOR ART DOCUMENT Patent Document

-   Patent Document 1: JP-A-2013-51547

SUMMARY OF THE INVENTION Technical Problem

In view of the circumstances described above, the present disclosureaims to provide a semiconductor device that can be more compact withoutlowering the dielectric strength.

Solution to Problem

The present disclosure provides a semiconductor device that includes: aconductive support member including a first lead having a first padportion and a second lead having a second pad portion adjacent to thefirst pad portion in a first direction perpendicular to a thicknessdirection of the first lead; a control element mounted on the first padportion; an insulating element mounted on the first pad portion andelectrically connected to the control element; a driver element mountedon the second pad portion and electrically connected to the insulatingelement; and a sealing resin covering the first pad portion, the secondpad portion, the control element, the insulating element and the driverelement. As viewed in the thickness direction, the first pad portion hasa first edge adjacent to the second pad portion in the first directionand extending in a second direction perpendicular to the thicknessdirection and the first direction. The first edge has a first end and asecond end opposite in the second direction. As viewed in the thicknessdirection, the second pad portion has a second edge adjacent to thefirst edge in the first direction and extending in the second direction.The second edge has a third end and a fourth end opposite in the seconddirection. One of the third end and the fourth end is located betweenthe first end and the second end in the second direction.

Other features and advantages of the present disclosure will be moreapparent from the detailed description given below with reference to theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a perspective view of a semiconductor device according to afirst embodiment of the present disclosure.

FIG. 2 is a plan view of the semiconductor device of FIG. 1 , as seenthrough a sealing resin.

FIG. 3 is a plan view of a lead frame used to fabricate thesemiconductor device of FIG. 1 .

FIG. 4 is an enlarged view showing a part of FIG. 2 .

FIG. 5 is an enlarged view showing a part of FIG. 2 .

FIG. 6 is an enlarged view showing a part of FIG. 2 .

FIG. 7 is an enlarged view showing a part of FIG. 2 .

FIG. 8 is a rear view of the semiconductor device of FIG. 1 .

FIG. 9 is a front view of the semiconductor device of FIG. 1 .

FIG. 10 is a left-side view of the semiconductor device of FIG. 1 .

FIG. 11 is a right-side view of the semiconductor device of FIG. 1 .

FIG. 12 is a sectional view taken along line XII-XII of FIG. 2 .

FIG. 13 is a sectional view taken along line XIII-XIII of FIG. 2 .

FIG. 14 is a sectional view taken along line XIV-XIV of FIG. 2 .

FIG. 15 is a sectional view taken along line XV-XV of FIG. 2 .

FIG. 16 is a plan view of the insulating element of the semiconductordevice of FIG. 1 , as seen through a coil protective film.

FIG. 17 is a plan view of the insulating element of the semiconductordevice of FIG. 1 , showing an upper surface of an eleventh insulatinglayer.

FIG. 18 is a plan view of the insulating element of the semiconductordevice of FIG. 1 , showing an upper surface of a fourth insulatinglayer.

FIG. 19 is a sectional view taken along line XIX-XIX of FIG. 16 .

FIG. 20 is a sectional view taken along line XX-XX of FIG. 16 .

FIG. 21 is a plan view illustrating advantages of the semiconductordevice of FIG. 1 .

FIG. 22 is a plan view of a semiconductor device according to a secondembodiment of the present disclosure, as seen through a sealing resin.

FIG. 23 is an enlarged view showing a part of FIG. 22 .

FIG. 24 is an enlarged view showing a part of FIG. 22 .

FIG. 25 is a sectional view taken along line XXV-XXV of FIG. 22 .

MODE FOR CARRYING OUT THE INVENTION

Embodiments of the present disclosure will be described with referenceto the accompanying drawings.

First Embodiment

With reference to FIGS. 1 to 20 , a semiconductor device A10 accordingto a first embodiment of the present disclosure will be described. Thesemiconductor device A10 includes a conductive support member 1, acontrol element 41, a driver element 42, an insulating element 50, aplurality of first wires 61, a plurality of second wires 62, a pluralityof third wires 63, a plurality of fourth wires 64 and a sealing resin70. The conductive support member 1 includes a first lead 10, a secondlead 20, a third lead 31, a fourth lead 32, a plurality of fifth leads33 and a plurality of sixth leads 34. For convenience, FIG. 2 shows thesealing resin 70 in phantom by imaginary lines (two-dot chain lines).FIGS. 14 and 15 show sections taken along the one-dot chain lines inFIG. 2 . FIG. 17 shows an upper surface of an eleventh insulating layer52 (to be detailed later) counted from a semiconductor substrate 51 (tobe detailed later). FIG. 18 shows an upper surface of a fourthinsulating layer 52 counted from the semiconductor substrate 51.

In the description of the semiconductor device A10, the direction in thethickness of the conductive support member 1 (the first lead 10 etc.) isreferred to as “thickness direction z”. A direction perpendicular to thethickness direction z is referred to as “first direction x”. The firstpad portion 11 of the first lead 10 and the second pad portion 21 of thesecond lead 20 (both of which are detailed later) are spaced apart fromeach other in the first direction x. The direction perpendicular to thethickness direction z and the first direction x is referred to as“second direction y”. As viewed in the thickness direction z, portionsof the conductive support member 1 extend out of the sealing resin 70 inthe second direction y.

In the example shown in FIG. 1 , the semiconductor device A10 is a gatedriver for driving a switching element that converts DC power into ACpower. The switching element may be an insulated gate bipolar transistor(IGBT) or a metal-oxide-semiconductor field-effect transistor (MOSFET).In this example, the semiconductor device A10 is described as driving anIGBT.

The conductive support member 1 provides conductive paths from thecontrol element 41 and the driver element 42 to a wiring board on whichthe semiconductor device A10 is mounted. The conductive support member 1is also a structure on which the control element 41, the driver element42 and the insulating element 50 are mounted. As shown in FIG. 3 , theconductive support member 1 is a part of a lead frame 80 (to be detailedlater) used for fabricating the semiconductor device A10. In oneexample, the conductive support member 1 has a thickness of 200 μm. Theconductive support member 1 is made of copper (Cu) or a copper alloy.The conductive support member 1 includes the first lead 10, the secondlead 20, the third lead 31, the fourth lead 32, the fifth leads 33 andthe sixth leads 34.

As shown in FIG. 2 , the first lead 10 has the first pad portion 11.

As shown in FIGS. 2 and 15 , the first pad portion 11 is where thecontrol element 41 and the insulating element 50 are mounted. The firstpad portion 11 is electrically connected to the control element 41 viaone of the first wires 61. The first pad portion 11 is covered by thesealing resin 70. Most surface of the first pad portion 11 is coatedwith a metal layer, such as a silver (Ag) coating. The first pad portion11 has a first edge 111.

As shown in FIG. 2 viewed in the thickness direction z, the first edge111 is adjacent to the second pad portion 21 (to be detailed later) inthe first direction x. The first edge 111 extends in the seconddirection y. The first edge 111 has a first end 111A and a second end111B. The first end 111A is one end of the first edge 111 in the seconddirection y. The second end 111B is the other end of the first edge 111in the second direction y. That is, the first end 111A and the secondend 111B are opposite ends of the first edge 111.

As shown in FIG. 2 , the second lead 20 has the second pad portion 21.

As shown in FIGS. 2 and 15 , the second pad portion 21 is where thedriver element 42 is mounted. The second pad portion 21 is adjacent tothe first pad portion 11 in the first direction x. The second padportion 21 is electrically connected to the driver element 42 via one ofthe second wires 62. The second pad portion 21 is covered by the sealingresin 70. Most surface of the second pad portion 21 is coated with ametal layer, such as a silver coating. The second pad portion 21 has asecond edge 211.

As shown in FIG. 2 viewed in the thickness direction z, the second edge211 is adjacent to the first edge 111 of the first pad portion 11 in thefirst direction x. The second edge 211 extends in the second directiony, and hence the second edge 211 is parallel to the first edge 111. Thesecond edge 211 has a third end 211A and a fourth end 211B. The thirdend 211A is one end of the second edge 211 in the second direction y.The fourth end 211B is the other end of the second edge 211 in thesecond direction y. That is, the third end 211A and the fourth end 211Bare opposite ends of the second edge 211.

As shown in FIG. 2 , one of the third end 211A and the fourth end 211Bof the second edge 211 is located between the first end 111A and thesecond end 111B of the first edge 111 in the second direction y. In thesemiconductor device A10 of this embodiment, the fourth end 211B islocated between the first end 111A and the second end 111B in the seconddirection y.

As shown in FIG. 2 , the first pad portion 11 also has a third edge 112,a fifth edge 113, a plurality of first through holes 114 and a pluralityof first recessed grooves 115.

As shown in FIG. 2 viewed in the thickness direction z, the third edge112 includes a segment extending in the first direction x. The thirdedge 112 is connected to one of the first end 111A and the second end111B of the first edge 111 that is located between the third end 211Aand the fourth end 211B of the second edge 211 of the second pad portion21 in the second direction y. In the semiconductor device A10, the thirdedge 112 is connected to the first end 111A. As shown in FIG. 4 , thethird edge 112 has a third-edge connecting portion 112A. The third-edgeconnecting portion 112A is connected to one of the first end 111A andthe second end 111B. In the semiconductor device A10, the third-edgeconnecting portion 112A is connected to the first end 111A. Thethird-edge connecting portion 112A is convex toward the outside of thefirst pad portion 11. The third-edge connecting portion 112A defines anarc.

As shown in FIG. 2 viewed in the thickness direction z, the fifth edge113 is spaced apart from the third edge 112 in the second direction yand connected to the first edge 111. In the semiconductor device A10,the fifth edge 113 is connected to the second end 111B of the first end111A. The fifth edge 113 includes a segment extending in the firstdirection x. As shown in FIG. 5 , the fifth edge 113 has a fifth-edgeconnecting portion 113A. In the semiconductor device A10, the fifth-edgeconnecting portion 113A is connected to the second end 111B. Thefifth-edge connecting portion 113A is convex toward the outside of thefirst pad portion 11. The fifth-edge connecting portion 113A defines anarc. The fifth-edge connecting portion 113A has a radius of curvature R1b that is smaller than the radius of curvature R1 a of the third-edgeconnecting portion 112A of the third edge 112 shown in FIG. 4 .

As shown in FIG. 2 viewed in the thickness direction z, the firstthrough holes 114 are located near the boundary between the first padportion 11 and the first terminal portion 12 (to be detailed later) andspaced apart from the control element 41 in the second direction y. Eachfirst through hole 114 extends through the first pad portion 11 in thethickness direction z. The first through holes 114 are arrayed in thefirst direction x.

As shown in FIGS. 12 an 15, the first recessed grooves 115 are recessedfrom the surface of the first pad portion 11 on which the controlelement 41 and the insulating element 50 are mounted. As shown in FIG. 2, each first recessed groove 115 extends either in the first direction xor in the second direction y. The semiconductor device A10 includes twofirst recessed grooves 115 extending in the first direction x, and threefirst recessed grooves 115 extending in the second direction y. The twofirst recessed grooves 115 extending in the first direction x arelocated between the control element 41 and the first through holes 114in the second direction y. The two first recessed grooves 115 arearrayed in the first direction x. The three first recessed grooves 115extending in the second direction y are located between the controlelement 41 and the insulating element 50 in the first direction x. Thethree first recessed grooves 115 are arrayed in the second direction y.As viewed in the thickness direction z, the four sides of the insulatingelement 50 are surrounded by the first edge 111, the third edge 112, thefifth edge 113 and the three first recessed grooves 115.

As shown in FIG. 2 , the second pad portion 21 additionally has a fourthedge 212, a sixth edge 213, a plurality of second through holes 214 anda plurality of second recessed grooves 215.

As shown in FIG. 2 viewed in the thickness direction z, the fourth edge212 includes a segment extending in the first direction x. The fourthedge 212 is connected to one of the third end 211A and the fourth end211B of the second edge 211 that is located between the first end 111Aand the second end 111B of the first edge 111 of the first pad portion11 in the second direction y. In the semiconductor device A10, thefourth edge 212 is connected to the fourth end 211B. As shown in FIG. 5, the fourth edge 212 has a fourth-edge connecting portion 212A. Thefourth-edge connecting portion 212A is connected to one of the third end211A and the fourth end 211B. In the semiconductor device A10, thefourth-edge connecting portion 212A is connected to the fourth end 211B.The fourth-edge connecting portion 212A is convex toward the outside ofthe second pad portion 21. The fourth-edge connecting portion 212Adefines an arc. The fourth-edge connecting portion 212A has a radius ofcurvature R2 a that is equal to the radius of curvature R1 a of thethird-edge connecting portion 112A of the third edge 112 shown in FIG. 4.

As shown in FIG. 2 viewed in the thickness direction z, the sixth edge213 is spaced apart from the fourth edge 212 in the second direction yand connected to the second edge 211. In the semiconductor device A10,the sixth edge 213 is connected to the third end 211A of the second edge211. The sixth edge 213 includes a segment extending in the firstdirection x. As shown in FIG. 4 , the sixth edge 213 has a sixth-edgeconnecting portion 213A. In the semiconductor device A10, the sixth-edgeconnecting portion 213A is connected to the third end 211A. Thesixth-edge connecting portion 213A is convex toward the outside of thesecond pad portion 21. The sixth-edge connecting portion 213A defines anarc. The sixth-edge connecting portion 213A has a radius of curvature R2b that is smaller than the radius of curvature R2 a of the fourth-edgeconnecting portion 212A of the fourth edge 212 shown in FIG. 5 .

Referring to FIG. 2 , the second through holes 214 are located near theboundary between the second pad portion 21 and the second terminalportion 22 (to be detailed later) and spaced apart from the driverelement 42 in the second direction y, as viewed in the thicknessdirection z. Each second through holes 214 extends through the secondpad portion 21 in the thickness direction z. The second through holes214 are arrayed in the first direction x.

As shown in FIG. 13 , the second recessed grooves 215 are recessed fromthe surface of the first terminal portion 22 on which the driver element42 is mounted. As shown in FIG. 2 , each second recessed groove 215extends in the first direction x. The second recessed grooves 215 arelocated between the driver element 42 and the second through hole 214 inthe second direction y. The second recessed grooves 215 are arrayed inthe first direction x.

As shown in FIG. 2 , the first lead 10 additionally has the firstterminal portion 12. The first terminal portion 12 is connected to thefirst pad portion 11 in the second direction y and exposed from thesealing resin 70. The first terminal portion 12 is the ground terminalof a source voltage for driving the control element 41. As viewed in thethickness direction z, the first terminal portion 12 has a strip shapeextending in the second direction y. As shown in FIG. 9 , the firstterminal portion 12 is bent to define a gull-wing shape as viewed in thefirst direction x. The first terminal portion 12 is coated with a tin(Sn) layer.

As shown in FIG. 2 , the second lead 20 additionally has the secondterminal portion 22. The second terminal portion 22 is connected to thesecond pad portion 21 in the second direction y and exposed from thesealing resin 70. The second terminal portion 22 is the ground terminalof a source voltage for driving the driver element 42. The secondterminal portion 22 is electrically connected to the emitter electrodeof the switching element driven by the semiconductor device A10. Asviewed in the thickness direction z, the second terminal portion 22 hasa strip shape extending in the second direction y. As viewed in thethickness direction z, the second terminal portion 22 extends out of thesealing resin 70 in the opposite direction to the direction in which thefirst terminal portion 12 extends out of the sealing resin 70. As shownin FIG. 8 , the second terminal portion 22 is bent to define a gull-wingshape as viewed in the first direction x. The second terminal portion 22is coated with a tin coating.

As shown in FIG. 2 , the third lead 31 has a third pad portion 311 and athird terminal portion 312.

As shown in FIG. 2 , the third pad portion 311 is adjacent to the fourthedge 212 of the second pad portion 21 in the second direction y. Thethird pad portion 311 is electrically connected to the control element41 via one of the first wires 61. The third pad portion 311 is coveredby the sealing resin 70. The third pad portion 311 extends from thethird terminal portion 312 toward the first pad portion 11. Most surfaceof the third pad portion 311 is coated with a metal layer, such as asilver coating. The third pad portion 311 has a third-pad proximate edge311A and a plurality of third through holes 311B.

Referring to FIG. 6 , as viewed in the thickness direction z, thethird-pad proximate edge 311A is the nearest edge to the fourth edge 212of the second pad portion 21. The third-pad proximate edge 311A extendsin the first direction x, and hence the third-pad proximate edge 311A isparallel to the fourth edge 212. As shown in FIG. 13 , each thirdthrough hole 311B extends through the third pad portion 311 in thethickness direction z.

As shown in FIG. 2 , the third terminal portion 312 is connected to thethird pad portion 311 in the second direction y and exposed from thesealing resin 70. The third terminal portion 312 is the positiveelectrode of a source voltage for driving the control element 41. Asviewed in the thickness direction z, the third terminal portion 312 hasa strip shape extending in the second direction y. As viewed in thethickness direction z, the third terminal portion 312 extends out of thesealing resin 70 in the same direction as the first terminal portion 12extending out of the sealing resin 70. As shown in FIG. 8 , the thirdterminal portion 312 is bent to define a gull-wing shape as viewed inthe first direction x. The third terminal portion 312 is coated with atin coating.

As shown in FIG. 2 , the fourth lead 32 has a fourth pad portion 321 anda fourth terminal portion 322.

As shown in FIG. 2 , the fourth pad portion 321 is adjacent to the thirdedge 112 of the first pad portion 11 in the second direction y. Thefourth pad portion 321 is electrically connected to the driver element42 via one of the second wires 62. The fourth pad portion 321 is coveredby the sealing resin 70. The fourth pad portion 321 extends from thefourth terminal portion 322 toward the second pad portion 21. Mostsurface of the fourth pad portion 321 is coated with a metal layer, suchas a silver coating. The fourth pad portion 321 has a fourth-padproximate edge 321A and a plurality of fourth through holes 321B.

Referring to FIG. 7 , as viewed in the thickness direction z, thefourth-pad proximate edge 321A is the nearest edge to the third edge 112of the first pad portion 11. The fourth-pad proximate edge 321A extendsin the first direction x, and hence the fourth-pad proximate edge 321Ais parallel to the third edge 112. As shown in FIG. 12 , each fourththrough hole 321B extends through the fourth pad portion 321 in thethickness direction z.

As shown in FIG. 2 , the fourth terminal portion 322 is connected to thefourth pad portion 321 in the second direction y and exposed from thesealing resin 70. The source voltage for driving the driver element 42is applied to the fourth terminal portion 322. As viewed in thethickness direction z, the fourth terminal portion 322 has a strip shapeextending in the second direction y. As viewed in the thicknessdirection z, the fourth terminal portion 322 extends out of the sealingresin 70 in the same direction as the second terminal portion 22extending out of the sealing resin 70. As shown in FIG. 9 , the fourthterminal portion 322 is bent to define a gull-wing shape as viewed inthe first direction x. The fourth terminal portion 322 is coated with atin coating.

As shown in FIG. 2 , the fifth leads 33 are next to each other in thefirst direction x and located between the first lead 10 and the thirdlead 31 in the first direction x. The semiconductor device A10 of thisexample has two fifth leads 33. Each fifth lead 33 has a fifth padportion 331 and a fifth terminal portion 332.

As shown in FIG. 2 , the fifth pad portions 331 are electricallyconnected to the control element 41 each via one of the first wires 61.The fifth pad portions 331 are covered by the sealing resin 70. Mostsurface of the fifth pad portions 331 is coated with a metal layer, suchas a silver coating. Each fifth pad portion 331 has a fifth through hole331A. As shown in FIG. 14 , the fifth through hole 331A extends throughthe fifth pad portion 331 in the thickness direction z.

As shown in FIG. 2 , the fifth terminal portions 332 are connected tothe respective fifth pad portions 331 in the second direction y andexposed from the sealing resin 70. The fifth terminal portions 332 arelocated between the first terminal portion 12 and the third terminalportion 312. The fifth terminal portions 332 of the fifth leads 33receive two different pulse signals. Those pulse signals are generatedfrom a pulse width modulation (PWM) signal serving as the base fordriving the switching element. As viewed in the thickness direction z,the fifth terminal portions 332 have a strip shape extending in thesecond direction y. As viewed in the thickness direction z, the fifthterminal portions 332 extend out of the sealing resin 70 in the samedirection as the first terminal portion 12 and the third terminalportion 312 extending out of the sealing resin 70. As shown in FIG. 14 ,each fifth terminal portion 332 is bent to define a gull-wing shape asviewed in the first direction x. The fifth terminal portions 332 arecoated with a tin coating.

As shown in FIG. 2 , the sixth leads 34 are next to each other in thefirst direction x and located between the second lead 20 and the fourthlead 32 in the first direction x. The sixth leads 34 are spaced apartfrom the fifth leads 33 in the second direction y. The semiconductordevice A10 of this example has two sixth leads 34. Each sixth lead 34has a sixth pad portion 341 and a sixth terminal portion 342.

As shown in FIG. 2 , the sixth pad portions 341 are electricallyconnected to the driver element 42 each via one of the second wires 62.The sixth pad portions 341 are covered by the sealing resin 70. Mostsurface of the sixth pad portions 341 is coated with a metal layer, suchas a silver coating. Each sixth pad portion 341 has a sixth through hole341A. As shown in FIG. 14 , the sixth through hole 341A extends throughthe sixth pad portion 341 in the thickness direction z.

As shown in FIG. 2 , the sixth terminal portions 342 are connected tothe respective sixth pad portion 341 in the second direction y andexposed from the sealing resin 70. The sixth terminal portions 342 arelocated between the second terminal portion 22 and the fourth terminalportion 322. The sixth terminal portions 342 of the sixth lead s34receive a gate voltage for driving the switching elements. One of thesixth leads 34 is electrically connected at the sixth terminal portion342 to the gate electrode of the switching element constituting an upperarm circuit (high-side section). Another of the sixth leads 34 iselectrically connected at the sixth terminal portion 342 to theswitching element constituting a lower arm circuit (low-side section).As viewed in the thickness direction z, the sixth terminal portions 342have a strip shape extending in the second direction y. As viewed in thethickness direction z, the sixth terminal portions 342 extend out of thesealing resin 70 in the same direction as the second terminal portion 22and the fourth terminal portion 322 extending out of the sealing resin70. As shown in FIG. 14 , each sixth terminal portion 342 is bent todefine a gull-wing shape as viewed in the first direction x. The sixthterminal portion 342 are coated with a tin coating.

Next, with reference to FIG. 3 , the lead frame 80 used for fabricatingthe semiconductor device A10 will be described.

The portion of the lead frame 80 shown in FIG. 3 includes the conductivesupport member 1 (the first lead 10, the second lead 20, the third lead31, the fourth lead 32, the fifth leads 33 and the sixth leads 34),which is a component of the semiconductor device A10. In addition to theconductive support member 1, the lead frame 80 includes a frame 81, aplurality of first tie bars 821, a plurality of second tie bars 822 anda pair of dam bars 83.

As viewed in the thickness direction z, the frame 81 has a rectangularshape. The frame 81 surrounds the conductive support member 1, the firsttie bars 821, the second tie bars 822 and the dam bars 83. The oppositeends of the conductive support member 1 in the first direction x areconnected to the frame 81.

The first tie bars 821 extend in the first direction x. Thesemiconductor device A10 of this example has two first tie bars 821 onone side of the first pad portion 11 and the second pad portion 21, andtwo more tie bars 821 on the other side. The first tie bars 821intersect the first terminal portion 12, the second terminal portion 22,the third terminal portion 312, the fourth terminal portion 322, thefifth terminal portions 332 of the fifth leads 33 and the sixth terminalportions 342 of the sixth leads 34.

The second tie bars 822 extend in the second direction y. Thesemiconductor device A10 of this example has four second tie bars 822.Each two adjacent first tie bars 821 are connected to each other at oneof their ends in the first direction x by one of the second tie bars822. Each second tie bar 822 is connected at an end in the seconddirection y to one of the dam bars 83.

The pair of dam bars 83 are on the opposite sides of the lead frame 80in the first direction x. Each dam bar 83 is connected to the frame 81at their opposite ends in the second direction y. Each dam bar 83 has acutaway portion 831 recessed in the first direction x. In themanufacture of the semiconductor device A10, the cutaway portions 831are used to form gates through which synthetic resin flows in and outfor forming a sealing resin 70 by molding.

The imaginary lines of FIG. 3 indicate the outer edges of the sealingresin 70 as viewed in the thickness direction z. The conductive supportmember 1 as viewed in the thickness direction z extends beyond theopposite edges of the sealing resin in the second direction y. Incontrast, as viewed in the thickness direction z, the region of the leadframe 80 corresponding to the conductive support member 1 does notextend beyond the opposite edges of the sealing resin 70 in the firstdirection x.

As shown in FIGS. 2 and 15 , the control element 41 is a semiconductorelement mounted on the first pad portion 11. As viewed in the thicknessdirection z, the control element 41 has a rectangular shape elongated inthe second direction y. The control element 41 is provided with aplurality of electrodes 411 on its upper surface. The electrodes 411include one connected to the first pad portion 11, one connected to thethird pad portion 311, and ones connected to the fifth pad portions 331,each via one of the first wires 61. The first wires 61 are made of gold(Au), for example. As viewed in the thickness direction z, the firstwire 61 that is connected to the third pad portion 311 is offset outwardfrom the insulating element 50. The control element 41 is disposed onthe first pad portion 11 via a bonding layer 49. The bonding layer 49may be formed from a silver paste containing an epoxy resin as a basecomponent. The control element 41 is bonded to the first pad portion 11by the bonding layer 49.

As shown in FIGS. 2 and 15 , the driver element 42 is a semiconductorelement mounted on the second pad portion 21. As viewed in the thicknessdirection z, the driver element 42 has a rectangular shape elongated thesecond direction y. The driver element 42 is provided with a pluralityof electrodes 421 on its upper surface. The electrodes 421 include oneconnected to the second pad portion 21, one connected to the fourth padportion 321 and ones connected to the sixth pad portions 341, each viaone of the second wires 62. The second wire 62 are made of gold, forexample. As viewed in the thickness direction z, the second wire 62 thatis connected to the fourth pad portion 321 extends across a regionbetween the third edge 112 of the first pad portion 11 and an extendedline of the sixth edge 213 of the second pad portion 21 in the seconddirection y. The driver element 42 is disposed on the second pad portion21 via a bonding layer 49. The driver element 42 is bonded to the secondpad portion 21 by the bonding layer 49.

As shown in FIGS. 2 and 15 , the insulating element 50 is asemiconductor element mounted on the first pad portion 11 and adjacentto the control element 41. As viewed in the thickness direction z, theinsulating element 50 is located between the control element 41 and thedriver element 42 in the first direction x. As viewed in the thicknessdirection z, the insulating element 50 has a rectangular shape elongatedthe second direction y. The insulating element 50 is provided with aplurality of low-voltage electrodes 53 and a plurality of high-voltageelectrodes 54 on its upper surface. Each low-voltage electrode 53 isconnected to one of the electrodes 411 of the control element 41 via athird wire 63. Each high-voltage electrode 54 is connected to one of theelectrodes 421 of the driver element 42 via a fourth wire 64. The thirdwire 63 and the fourth wires 64 are made of gold, for example. Theinsulating element 50 is disposed on the first pad portion 11 via abonding layer 49. The insulating element 50 is bonded to the first padportion 11 by the bonding layer 49.

As shown in FIGS. 12 to 15 , the sealing resin 70 covers the controlelement 41, the driver element 42, the insulating element 50, the firstwires 61, the second wires 62, the third wires 63 and the fourth wires64. The sealing resin 70 is made of a material containing epoxy resin,for example. As shown in FIGS. 8 to 11 , the sealing resin 70 has afirst side surface 71, a second side surface 72, a third side surface 73and a fourth side surface 74.

As shown in FIG. 2 , the first side surface 71 and the second sidesurface 72 are spaced apart from each other in the first direction x.The first side surface 71 is adjacent to the second pad portion 21 andthe third pad portion 311. The second side surface 72 is adjacent to thefirst pad portion 11 and the fourth pad portion 321. As shown in FIGS.2, 8 and 9 , the conductive support member 1 is not exposed on eitherthe first side surface 71 or the second side surface 72.

As shown in FIGS. 8 and 11 , the first side surface 71 has a first upperportion 711, a first lower portion 712 and a first middle portion 713.The first upper portion 711 is connected to the upper edge of the firstmiddle portion 713 and inclined relative to the thickness direction ztoward the second side surface 72. The first lower portion 712 isconnected to the lower edge of the first middle portion 713 and inclinedrelative to the thickness direction z toward the second side surface 72.The first middle portion 713 is parallel to the thickness direction zand has a strip shape extending in the second direction y.

As shown in FIG. 8 , the first side surface 71 has a first gate mark 75that is partly on the first middle portion 713 and partly on the firstlower portion 712. The first gate mark 75 has a higher surface roughnessthan the rest of the first side surface 71. The first gate mark 75 isformed as a result that synthetic resin flows in and out during themolding of the sealing resin 70. As shown in FIG. 2 viewed in thethickness direction z, the first gate mark 75 includes a region lyingbetween an extended line of the fourth edge 212 of the second padportion 21 and an extended line of the fifth edge 113 of the first padportion 11 in the second direction y.

As shown in FIGS. 9 and 10 , the second side surface 72 has a secondupper portion 721, a second lower portion 722 and a second middleportion 723. The second upper portion 721 is connected to the upper edgeof the second middle portion 723 and inclined relative to the thicknessdirection z toward the first side surface 71. The second lower portion722 is connected to the lower edge of the second middle portion 723 andinclined relative to the thickness direction z toward the first sidesurface 71. The second middle portion 723 is parallel to the thicknessdirection z and has a strip shape extending in the second direction y.

As shown in FIG. 9 , the second side surface 72 has a second gate mark76 that is partly on the second middle portion 723 and partly on thesecond lower portion 722. The second gate mark 76 has a higher surfaceroughness than other regions of the second side surface 72. Similarly tothe first gate mark 75, the second gate mark 76 is formed as a resultthat synthetic resin flows in and out during the molding of the sealingresin 70. As shown in FIG. 2 viewed in the thickness direction z, thesecond gate mark 76 includes a region lying between an extended line ofthe third edge 112 of the first pad portion 11 and an extended line ofthe sixth edge 213 of the second pad portion 21 in the second directiony. The first gate mark 75 and the second gate mark 76 are spaced apartfrom each other in the second direction y.

As shown in FIGS. 10 and 11 , the first upper portion 711 of the firstside surface 71 and the second upper portion 721 of the second sidesurface 72 have a height h1 that is greater than the height h2 of thefirst lower portion 712 of the first side surface 71 and the secondlower portion 722 of the second side surface 72. The heights h1 and h2are dimensions measured in the thickness direction z.

As shown in FIG. 2 , the third side surface 73 and the fourth sidesurface 74 are spaced apart from each other in the second direction y.Each of the third side surface 73 and the fourth side surface 74 isconnected at their ends in the first direction x to the first sidesurface 71 and the second side surface 72. As shown in FIGS. 2 and 10 ,the first terminal portion 12, the third terminal portion 312 and thefifth terminal portions 332 of the fifth leads 33 are exposed from thethird side surface 73. As shown in FIGS. 2 and 11 , the second terminalportion 22, the fourth terminal portion 322 and the sixth terminalportions 342 of the sixth leads 34 are exposed from the fourth sidesurface 74.

Next, with reference to FIGS. 16 to 20 , the internal structure of theinsulating element 50 is described. The insulating element 50 includes asemiconductor substrate 51, a plurality of insulating layers 52, aplurality of low-voltage electrodes 53, a plurality of high-voltageelectrodes 54, a plurality of coils 55, a plurality of low-voltagewirings 56, a plurality of high-voltage wirings 57, a shield layer 58and a protective film 59. In the semiconductor device A10 of thisexample, the low-voltage electrodes 53 includes a pair of firstelectrodes 531 and a second electrode 532. The high-voltage electrodes54 includes a pair of third electrodes 541 and a fourth electrode 542.Unless otherwise specified, the upper and lower directions used in thedescription of the internal structure of the insulating element 50 referto the upper and lower directions in the thickness direction z.

As shown in FIGS. 19 and 20 , the semiconductor substrate 51 is locatedat the bottom of the insulating element 50. The semiconductor substrate51 is made of silicon (Si) or silicon carbide (SiC).

As shown in FIGS. 19 and 20 , the insulating layers 52 are electricallyinsulative and stacked on the semiconductor substrate 51. Thesemiconductor device A10 of this example includes 12 insulating layers52. The number of insulating layers 52 is not limited to this, and anynumber of insulating layers may be provided, depending on the dielectricstrength required for the insulating element 50. In the followingdescription, the fifth insulating layer 52 refers to the fifth one ofthe insulating layers 52, counted from the semiconductor substrate 51 inthe thickness direction z. The same description applies to the otherinsulating layers 52. The first insulating layer 52 is formed of aninterlayer film 522. The interlayer film 522 may be made from silicondioxide (SiO₂). The other insulating layers 52 (the second to twelfthlayers) are each formed of an etching stopper film 521 and an interlayerfilm 522. In each insulating layer 52, the etching stopper film 521 islocated below the interlayer film 522. Each etching stopper film 521 isin contact with the interlayer film 522 of the insulating layer 52directly therebelow. The etching stopper films 521 are made from siliconnitride (Si₃N₄) or silicon carbide, for example.

As shown in FIGS. 17 to 20 , the coils 55 are disposed within theinsulating layers 52. The coils 55 include a plurality of pairs, eachmade up of a lower coil 551 and an upper coil 552. The semiconductordevice A10 of this example includes two pairs of coils 55. That is, inthe semiconductor device A10 of this example, the coils 55 include twolower coils 551 and two upper coils 552. The lower coils 551 are locatedbelow the upper coils 552. In the thickness direction z, the lower coils551 are separated from the upper coils 552 by the plurality ofinsulating layers 52. In the semiconductor device A10 of this example,the lower coils 551 are disposed within the fourth insulating layer 52,and the upper coils 552 are disposed within the eleventh insulatinglayer 52. As viewed in the thickness direction z, the two lower coils551 overlap with the respective upper coils 552.

As viewed in the thickness direction z, each coil 55 is an oval shapedspiral. Each coil 55 extends in the thickness direction z through thecorresponding insulating layer 52. Each coil 55 is made of a conductivelayer and a barrier metal layer. The conductive layer may be made ofcopper. The barrier metal layer covers the surface of the conductivelayer (except the upper end of the conductive layer). In one example,the barrier metal layer includes a tantalum (Ta) layer, a tantalumnitride (TaN) layer, and another tantalum layer that are stacked insequence on the conductive layer.

The low-voltage wirings 56 provide conductive paths between the lowercoils 551 and the low-voltage electrodes 53. Each low-voltage wiring 56is made of a conductive layer and a barrier metal layer, which are thesame as those used in the coils 55. As shown in FIG. 16 , thelow-voltage electrodes 53 includes a pair of first electrodes 531 and asecond electrode 532. The second electrode 532 is located between thefirst electrodes 531 in the second direction y.

From among the plurality of low-voltage wirings 56, the followingdescribes a pair of low-voltage wirings 56 that electrically connect thelower coils 551 to the first electrodes 531. Each low-voltage wiring 56in the pair includes a lower-coil inner-end wiring 561, a lead-in wiring563 and a via wiring 564 as components.

As shown in FIG. 18 viewed in the thickness direction z, the lower-coilinner-end wiring 561 extends in the second direction y and surrounded bythe inner edge of the lower coil 551. The lower-coil inner-end wiring561 has an end in the second direction y connected to the inner end ofthe lower coil 551. As shown in FIG. 19 , the lower-coil inner-endwiring 561 is disposed within the same fourth insulating layer 52 as thelower coil 551 that surrounds the lower-coil inner-end wiring 561.

As shown in FIGS. 18 and 19 , the lead-in wiring 563 is connected to thelower-coil inner-end wiring 561 and extends in the first direction x tothe via wiring 564. The lead-in wiring 563 has a main portion 563A, aconnecting portion 563B and a grounding portion 563C. The main portion563A is disposed within the second insulating layer 52 and extends inthe first direction x. The connecting portion 563B is disposed withinthe third insulating layer 52 and electrically connects the main portion563A to the lower-coil inner-end wiring 561. The grounding portion 563Cis disposed within the first insulating layer 52 and electricallyconnects the main portion 563A to the semiconductor substrate 51.

As shown in FIG. 19 , the via wiring 564 extends in the thicknessdirection z. The via wiring 564 is connected to the lead-in wiring 563.The via wiring 564 includes a pair of strip portions 564A and aplurality of pillar portions 564B. Each strip portion 564A extends inthe second direction y. One of the strip portions 564A is disposedwithin the same fourth insulating layer 52 as the lower coils 551. Theother strip portion 564A is disposed above the lower strip portion 564Awithin the same eleventh insulating layer 52 as the upper coils 552. Asviewed in the thickness direction z, the pair of strip portions 564Aoverlap with each other. The pillar portions 564B connect the mainportion 563A of the lead-in wiring 563 and the pair of strip portions564A. The pillar portions 564B extend through the third insulating layer52 and also through the fifth to tenth insulating layers 52. The lowerends of the pillar portions 564B are connected to the upper end of themain portion 563A. The upper ends of the pillar portions 564B areconnected to the lower end of the upper one of the second strip portions564A. The upper second strip portion 564A is connected at its upper endto a first electrode 531.

From among the plurality of low-voltage wirings 56, the followingdescribes the low-voltage wiring 56 that electrically connects the twolower coils 551 to the second electrode 532. This low-voltage wiring 56includes a lower-coil outer-end wiring 562, a lead-in wiring 563 and avia wiring 564 as components. The lead-in wiring 563 and the via wiring564 of this low-voltage wiring 56 are similar to those of thelow-voltage wirings 56 connecting the lower coils 551 to the firstelectrodes 531, so that a description thereof is omitted.

Referring to FIG. 18 , as viewed in the thickness direction z, thelower-coil outer-end wiring 562 extends in the second direction y andlocated between the two lower coils 551 in the second direction y. Thelower-coil outer-end wiring 562 has ends in the second direction yconnected to the respective outer ends of the lower coils 551. As shownin FIG. 20 , the lower-coil outer-end wiring 562 is disposed within thesame fourth insulating layer 52 as the lower coils 551. As shown in FIG.20 , the second electrode 532 is connected to the upper end of the stripportion 564A of the via wiring 564 disposed within the eleventhinsulating layer 52.

The high-voltage wirings 57 provides conductive paths between the uppercoils 552 and the high-voltage electrodes 54. Each high-voltage wiring57 is made of a conductive layer and a barrier metal layer, which arethe same as those used in the coils 55. As shown in FIG. 16 , thehigh-voltage electrodes 54 include a pair of third electrodes 541 and afourth electrode 542. The fourth electrode 542 is located between thethird electrodes 541 in the second direction y.

From among the plurality of high-voltage wirings 57, the followingdescribes a pair of high-voltage wirings 57 that electrically connectthe upper coils 552 to the third electrodes 541. Each high-voltagewiring 57 in the pair includes an upper-coil inner-end wiring 571 as acomponent. As shown in FIG. 17 viewed in the thickness direction z, theupper-coil inner-end wiring 571 extends in the second direction y andsurrounded by the inner edge of the upper coil 552. The upper-coilinner-end wiring 571 has an end in the second direction y connected tothe inner end of the upper coil 552. As shown in FIG. 19 , theupper-coil inner-end wiring 571 is disposed within the same eleventhinsulating layer 52 as the upper coil 552 surrounding that upper-coilinner-end wiring 571. The upper-coil inner-end wiring 571 is connectedat its upper end to a third electrode 541.

From among the plurality of high-voltage wirings 57, the followingdescribes the high-voltage wiring 57 that electrically connects the twoupper coils 552 to the fourth electrode 542. This high-voltage wiring 57includes an upper-coil outer-end wiring 572 as a component. As shown inFIG. 17 viewed in the thickness direction z, the upper-coil outer-endwiring 572 extends in the second direction y and located between thepair of upper coils 552 in the second direction y. The upper-coilouter-end wiring 572 has ends in the second direction y connected to therespective outer ends of the upper coils 552. As shown in FIG. 20 , theupper-coil outer-end wiring 572 is disposed within the same eleventhinsulating layer 52 as the upper coils 552. The upper-coil outer-endwiring 572 is connected at its upper end to the fourth electrode 542.

Referring to FIG. 16 , as viewed in the thickness direction z, thelow-voltage electrodes 53 are spaced apart from the coils 55 in thefirst direction x.

As shown in FIG. 19 , each first electrode 531, which is a low-voltageelectrode 53, has a pad portion 531A and a plurality of connectingportions 531B. As shown in FIG. 16 , the pad portion 531A has tworegions separated in the second direction y, and one of the third wires63 is connected to one of the two regions. The pad portion 531A isdisposed on the topmost insulating layer 52. The pad portion 531A may bemade of aluminum (Al). The connecting portions 531B extend in thethickness direction z from the lower end of the pad portion 531A. Theconnecting portions 531B are disposed within the twelfth insulatinglayer 52. The connecting portions 531B are composed of a conductivelayer and a barrier metal layer, which are the same as those used in thecoils 55. The connecting portions 531B are connected at their lower endsto the strip portion 564A (disposed within the eleventh insulating layer52) of the via wiring 564 that is electrically connected to thelower-coil inner-end wiring 561.

As shown in FIG. 20 , the second electrode 532, which is a low-voltageelectrode 53, has a pad portion 532A and a plurality of connectingportions 532B. As shown in FIG. 16 , the pad portion 532A has tworegions separated in the second direction y, and one of the third wires63 is connected to one of the two regions. The pad portion 532A isdisposed on the topmost insulating layer 52. The pad portion 532A may bemade of aluminum. The connecting portions 532B extend in the thicknessdirection z from the lower end of the pad portion 532A. The connectingportions 532B are disposed within the twelfth insulating layer 52. Theconnecting portions 532B are composed of a conductive layer and abarrier metal layer, which are the same as those used in the coils 55.The connecting portions 532B are connected at their lower ends to thestrip portion 564A (disposed within the eleventh insulating layer 52) ofthe via wiring 564 that is electrically connected to the lower-coilouter-end wiring 562.

As shown in FIG. 17 , each high-voltage electrode 54 has portionsoverlapping with a high-voltage wiring 57.

As shown in FIG. 19 , each third electrode 541, which is a high-voltageelectrode 54, has a pad portion 541A and a plurality of connectingportions 541B. As shown in FIG. 16 , the pad portion 541A has tworegions separated in the second direction y, and one of the fourth wires64 is connected to one of the two regions. The pad portion 541A isdisposed on the topmost insulating layer 52. The pad portion 541A may bemade of aluminum. The connecting portions 541B extend in the thicknessdirection z from the lower end of the pad portion 541A. The connectingportions 541B are disposed within the twelfth insulating layer 52. Theconnecting portions 541B are composed of a conductive layer and abarrier metal layer, which are the same as those used in the coils 55.The connecting portions 541B are connected at their lower ends to theupper-coil inner-end wiring 571.

As shown in FIG. 20 , the fourth electrode 542, which is a high-voltageelectrode 54, has a pad portion 542A and a plurality of connectingportions 542B. As shown in FIG. 16 , the pad portion 542A has tworegions separated in the second direction y, and one of the fourth wires64 is connected to one of the two regions. The pad portion 542A isdisposed on the topmost insulating layer 52. The pad portion 542A may bemade of aluminum. The connecting portions 542B extend in the thicknessdirection z from the lower end of the pad portion 542A. The connectingportions 542B are disposed within the twelfth insulating layer 52. Theconnecting portions 542B are composed of a conductive layer and abarrier metal layer, which are the same as those used in the coils 55.The connecting portions 542B are connected at their lower ends to theupper-coil outer-end wiring 572.

Referring to FIGS. 16 to 18 , as viewed in the thickness direction z,the shield layer 58 has the shape of a frame surrounding the coils 55,the low-voltage wirings 56 and the high-voltage wirings 57. The shieldlayer 58 is composed of a conductive layer and a barrier metal layer,which are the same as those used in the coils 55. As shown in FIGS. 19and 20 , the shield layer 58 has a frame portion 581 and a plurality ofgrounding portions 582. The frame portion 581 extends in thicknessdirection z so as to surround the coils 55, the low-voltage wirings 56and the high-voltage wirings 57. The frame portion 581 extends from thesecond to eleventh insulating layers 52. The grounding portions 582 aredisposed within the first insulating layer 52 and electrically connectthe frame portion 581 to the semiconductor substrate 51.

As shown in FIGS. 19 and 20 , the protective film 59 is disposed on thetopmost insulating layer 52. The protective film 59 includes apassivation film 591 and a coil protecting film 592. The passivationfilm 591 covers the topmost insulating layer 52, leaving the low-voltageelectrodes 53 and the high-voltage electrodes 54 uncovered. In oneexample, the passivation film 591 is composed of a silicon dioxide filmand a silicon nitride film that are stacked in sequence on the topmostinsulating layer 52. The coil protecting film 592 is disposed on thepassivation film 591. The coil protecting film 592 are disposed tooverlap with the individual coils 55 as viewed in the thicknessdirection z. The coil protecting film 592 is made of polyimide, forexample.

The following describes operations of the control element 41, the driverelement 42 and the insulating element 50 included in the semiconductordevice A10.

When two different pulse signals are inputted to the fifth terminalportions 332 of the fifth leads 33, the signals are transmitted via thefirst wires 61 to the control element 41. The two pulse signals areconverted by a pair of transistors and a pulse generator included in thecontrol element 41 to one low-voltage pulse signal of five volts(provided that the reference voltage of the control element 41 is zerovolt). The resulting low-voltage pulse signal is inputted via the thirdwires 63 to one of the first electrodes 531 and also to the secondelectrode 532, all of which are low-voltage electrodes 53.

The low-voltage pulse signal inputted to the first electrode 531 and thesecond electrode 532 is then passed via the low-voltage wirings 56 tothe lower coils 551 and converted into magnetic force. The magneticforce is then converted by the upper coils 552 positioned above thelower coils 551 into a high-voltage pulse signal of 1,215 volts(provided that the reference voltage of the driver element 42 is 1,200volts). The resulting high-voltage pulse signal is outputted via thehigh-voltage wirings 57 to one of the third electrodes 541 and also tothe fourth electrode 542, all of which are high-voltage electrodes 54.

The high-voltage pulse signal outputted to the third electrode 541 andthe fourth electrode 542 are transmitted via the fourth wires 64 to thedriver element 42. The high-voltage pulse signal is then converted bythe driver element 42 to a gate voltage for driving the switchingelements constituting either the upper arm circuit or the lower armcircuit. The gate voltage is then transmitted via one of the secondwires 62 to the sixth terminal portion 342 of one of the sixth leads 34and output therefrom.

As described above, the semiconductor device A10 is divided by theinsulating element 50 into a low voltage section having the controlelement 41 and a high voltage section having the driver element 42. Thismeans that the first lead 10, the third lead 31, the fifth leads 33, thefirst wires 61 and the third wires 63, all of which are electricallyconnected to the control element 41, belong to the low voltage sectionof the semiconductor device A10. Also, the second lead 20, the fourthlead 32, the sixth leads 34, the second wires 62 and the fourth wires64, all of which are electrically connected to the driver element 42,belong to the high voltage section of the semiconductor device A10.

Next, advantages of the semiconductor device A10 will be described.

In the semiconductor device A10, the second pad portion 21 of the secondlead 20 is adjacent to the first pad portion 11 of the first lead 10 inthe first direction x. The second lead 20 belongs to the higher voltagesection compared to the first lead 10. As viewed in the thicknessdirection z, the first pad portion 11 has the first edge 111 that isadjacent to the second pad portion 21 in the first direction x andextends in the second direction y. As viewed in the thickness directionz, the second pad portion 21 has the second edge 211 that is adjacent tothe first edge 111 in the first direction x and extends in the seconddirection y. In the second direction y, either of the third end 211A andthe fourth end 211B of the second edge 211 is located between the firstend 111A and the second end 111B of the first edge 111. With thisconfiguration, when the sealing resin 70 is formed in the manufacture ofthe semiconductor device A10, synthetic resin flows through the flowchannel F having a crank-like shape as shown in FIG. 21 .Advantageously, the portion of the flow channel F between the first edge111 and the second edge 211 is parallel to the second direction y. Thisensures that the resulting sealing resin 70 closely fills the spacebetween the first pad portion 11 in the low voltage section and thefirst terminal portion 12 in the high voltage section without leavingvoids. Consequently, the semiconductor device A10 can be configuredcompact without lowering the dielectric strength of the semiconductordevice A10.

As shown in FIG. 21 , when the sealing resin 70 is formed in themanufacture of the semiconductor device A10, synthetic resin flowsthrough the flow channel F as viewed in the thickness direction z. Bythe flow of synthetic resin, the first wire 61 that connects the controlelement 41 mounted on the first pad portion 11 to the third pad portion311 of the third lead 31 pushed in the direction of allow shown in FIG.21 , which is viewed in the thickness direction z. In view of this, thefirst wire 61 is offset outward from the insulating element 50 mountedon the first pad portion 11 as viewed in the thickness direction z.Similarly, the second wire 62 that connects the driver element 42mounted on the second pad portion 21 to the fourth pad portion 321 ofthe fourth lead 32 is pushed in the direction of allow shown in FIG. 21, which is viewed in the thickness direction z. In view of this, thesecond wire 62 is placed to extend across the region between the thirdedge 112 of the first pad portion 11 and a line extended from the sixthedge 213 of the second pad portion 21 in the second direction y as shownin FIG. 2 viewed in the thickness direction z. These arrangements of thefirst wire 61 and the second wire 62 ensure that they are not pushedcloser to the insulating element 50. Decrease of the dielectric strengthof the semiconductor device A10 can therefore be avoided.

As viewed in the thickness direction z, the third edge 112 of the firstpad portion 11 is connected to one of the first end 111A and the secondend 111B of the first edge 111 that is located between the third end211A and the fourth end 211B of the second edge 211 of the second padportion 21 in the second direction y. The fourth edge 212 of the secondpad portion 21 is connected to one of the third end 211A and the fourthend 211B of the second edge 211 that is located between the first end111A and the second end 111B of the first edge 111 in the seconddirection y. The third edge 112 and the fourth edge 212 both include asegment extending in the first direction x. With this configuration,when the sealing resin 70 is formed in the manufacture of thesemiconductor device A10, the flow of synthetic resin is caused to moreclosely follow the flow channel F as viewed in the thickness directionz. The above-described advantage is further increased, and the decreaseof the dielectric strength of the semiconductor device A10 is moreeffectively prevented.

The first side surface 71 and the second side surface 72 of the sealingresin 70 are spaced apart from each other in the first direction x. Thefirst side surface 71 has the first gate mark 75 formed thereon. Thefirst gate mark 75 has a region lying between a line extended from thefourth edge 212 of the second pad portion 21 and a line extended fromthe fifth edge 113 of the first pad portion 11 in the second directiony. The second side surface 72 has the second gate mark 76 formedthereon. The second gate mark 76 has a region lying between a lineextended from the third edge 112 of the first pad portion 11 and a lineextended from the sixth edge 213 of the second pad portion 21. The gatemarks appear as a result that the gates through which synthetic resinflows in and out are formed at positions corresponding to the ends ofthe flow channel F shown in FIG. 21 , when the sealing resin 70 isformed in the manufacture of the semiconductor device A10.

The semiconductor device A10 is configured such that the conductivesupport member 1 is not exposed on the first side surface 71 and thesecond side surface 72 of the sealing resin 70. The semiconductor deviceA10 is therefore provided with a longer insulation distance in thesecond direction y. This is effective to prevent the decrease of thedielectric strength of the semiconductor device A10.

The third edge 112 of the first pad portion 11 has the third-edgeconnecting portion 112A connected to one of the first end 111A and thesecond end 111B of the first edge 111. The third-edge connecting portion112A is convex toward the outside of the first pad portion 11. Thefourth edge 212 of the second pad portion 21 has the fourth-edgeconnecting portion 212A connected to one of the third end 211A and thefourth end 211B of the second edge 211. This configuration is moreeffective to prevent the decrease of the dielectric strength between thefirst pad portion 11 in the low voltage section and the second padportion 21 in the high voltage section.

As viewed in the thickness direction z, the third pad portion 311 hasthe third-pad proximate edge 311A, which is a nearest edge to the fourthedge 212 of the second pad portion 21. The third-pad proximate edge 311Aextends in the first direction x. As a result, the portion of the flowchannel F shown in FIG. 21 is more parallel to the first direction xbetween the fourth edge 212 and the third-pad proximate edge 311A.Consequently, the space between the third pad portion 311 in the lowvoltage section and the second pad portion 21 in the high voltagesection is closely filled with the sealing resin 70 without leavingvoids. This is effective to prevent the decrease of the dielectricstrength between them.

The third pad portion 311 extends from the third terminal portion 312 ofthe third lead 31 toward the first pad portion 11. Thus, the length ofthe first wire 61 connecting the third pad portion 311 to the controlelement 41 can be shorter. The shorter first wire 61 is less likely tobe pushed toward to the insulating element 50.

As viewed in the thickness direction z, the fourth pad portion 321 hasthe fourth-pad proximate edge 321A, which is a nearest edge to the thirdedge 112. The fourth-pad proximate edge 321A extends in the firstdirection x. As a result, the portion of the flow channel F shown inFIG. 21 is more parallel to the first direction x between the third edge112 and the fourth-pad proximate edge 321A. Consequently, the spacebetween the fourth pad portion 321 in the high voltage section and thefirst pad portion 11 in the low voltage section is closely filled withthe sealing resin 70 without leaving voids. This is effective to preventthe decrease of the dielectric strength between them.

The fourth pad portion 321 extends from the fourth terminal portion 322of the fourth lead 32 toward the second pad portion 21. Thus, the lengthof the second wire 62 connecting the driver element 42 to the fourth padportion 321 can be shorter. The shorter second wire 62 is less likely tobe pushed toward to the insulating element 50.

As shown in FIGS. 10 and 11 , the first upper portion 711 of the firstside surface 71 and the second upper portion 721 of the second sidesurface 72 have a height h1, whereas the first lower portion 712 of thefirst side surface 71 and the second lower portion 722 of the secondside surface 72 have a height h2. The height h1 is greater than theNeigh h2. This means that the larger minimum thickness of the sealingresin 70 is increased to be sufficient for covering the first wires 61,the second wires 62, the third wire 63 and the fourth wires 64. This iseffective to prevent the decrease of the dielectric strength of thesemiconductor device A10.

Second Embodiment

With reference to FIGS. 22 to 25 , a semiconductor device A20 accordingto a second embodiment of the present disclosure will be described. Inthese figures, elements similar to those of the semiconductor device A10are denoted by the same reference signs and a description thereof isomitted. For convenience, FIG. 22 shows the sealing resin 70 in phantomby imaginary lines (two-dot chain lines).

The semiconductor device A20 differs from the semiconductor device A10in the configurations of the third lead 31, the fourth lead 32, thefifth leads 33 and the sixth leads 34.

As shown in FIGS. 22 and 23 , the third pad portion 311 of the thirdlead 31 has a third-pad curved edge 311C. As viewed in the thicknessdirection z, third-pad curved edge 311C is adjacent to the first gatemark 75 of the sealing resin 70 in the first direction x. The third-padcurved edge 311C is convex toward the first gate mark 75.

As shown in FIGS. 23 and 24 , the fourth pad portion 321 of the fourthlead 32 has a fourth-pad curved edge 321C. As viewed in the thicknessdirection z, the fourth-pad curved edge 321C is adjacent to the secondgate mark 76 of the sealing resin 70 in the first direction x. Thefourth-pad curved edge 321C is convex toward the second gate mark 76.

As shown in FIG. 22 , the fifth pad portion 331 of each fifth lead 33has a fifth through hole 331A that is larger in diameter than the fifththrough hole 331A of the semiconductor device A10. As shown in FIG. 25 ,the fifth through hole 331A is filled with the sealing resin 70.

As shown in FIG. 22 , the sixth pad portion 341 of each sixth lead 34has a sixth through hole 341A that is larger in diameter than the sixththrough hole 341A of the semiconductor device A10. As shown in FIG. 25 ,the sixth through hole 341A is filled with the sealing resin 70.

Next, advantages of the semiconductor device A20 will be described.

In the semiconductor device A20, the second pad portion 21 of the secondlead 20 is adjacent to the first pad portion 11 of the first lead 10 inthe first direction x. The second lead 20 belongs to a higher voltagesection compared to the first lead 10. As viewed in the thicknessdirection z, the first pad portion 11 has the first edge 111 that isadjacent to the second pad portion 21 in the first direction x andextends in the second direction y. As viewed in the thickness directionz, the second pad portion 21 has the second edge 211 that is adjacent tothe first edge 111 in the first direction x and extends in the seconddirection y. In the second direction y, either of the first end 111A andthe second end 111B of the first edge 111 is located between the thirdend 211A and the fourth end 211B of the second edge 211. Consequently,the semiconductor device A20 can be configured compact without decreaseof the dielectric strength of the semiconductor device A20.

In the semiconductor device A20, the third pad portion 311 of the thirdlead 31 has the third-pad curved edge 311C. As viewed in the thicknessdirection z, the third-pad curved edge 311C is adjacent to the firstgate mark 75 of the sealing resin 70 in the first direction x and convextoward first gate mark 75. This helps to form the sealing resin 70without a crack near the first gate mark 75.

In the semiconductor device A20, the fourth pad portion 321 of thefourth lead 32 has the fourth-pad curved edge 321C. As viewed in thethickness direction z, the fourth-pad curved edge 321C is adjacent tothe second gate mark 76 of the sealing resin 70 in the first direction xand convex toward second gate mark 76. This helps to form the sealingresin 70 without a crack near the second gate mark 76.

Each fifth lead 33 has the fifth through hole 331A that extends throughthe fifth pad portion 331 in the thickness direction z. The fifth padportions 331 are covered by the sealing resin 70. In the semiconductordevice A20, the sealing resin 70 fills the fifth through holes 331A. Ifa force is applied to pull out a fifth lead 33 from the sealing resin70, the portion of the sealing resin 70 present in the fifth throughhole 331A resists the force. This prevents detachment of the fifth lead33 from the sealing resin 70.

The sixth lead 34 has the sixth through hole 341A that extends throughthe sixth pad portion 341 in the thickness direction z. The sixth padportions 341 are covered by the sealing resin 70. In the semiconductordevice A20, the sealing resin 70 fills the sixth through holes 341A. Ifa force is applied to pull out a sixth lead 34 from the sealing resin70, the portion of the sealing resin 70 present in the sixth throughhole 341A resists the force. This prevents detachment of the sixth lead34 from the sealing resin 70.

The present disclosure is not limited to the specific embodimentsdescribed above. The specific configuration of each part of thesemiconductor device according to the present disclosure may be variedin design in many ways.

Embodiments of the present disclosure may be defined according to thefollowing clauses.

Clause 1. A semiconductor device comprising:

a conductive support member including a first lead having a first padportion and a second lead having a second pad portion adjacent to thefirst pad portion in a first direction perpendicular to a thicknessdirection of the first lead;

a control element mounted on the first pad portion;

an insulating element mounted on the first pad portion and electricallyconnected to the control element;

a driver element mounted on the second pad portion and electricallyconnected to the insulating element; and

a sealing resin covering the first pad portion, the second pad portion,the control element, the insulating element and the driver element,

wherein as viewed in the thickness direction, the first pad portion hasa first edge adjacent to the second pad portion in the first directionand extending in a second direction perpendicular to the thicknessdirection and the first direction,

as viewed in the thickness direction, the second pad portion has asecond edge adjacent to the first edge in the first direction andextending in the second direction,

the first edge has a first end and a second end that are opposite in thesecond direction,

the second edge has a third end and a fourth end that are opposite inthe second direction, and one of the third end and the fourth end islocated between the first end and the second end in the seconddirection.

C

Clause 2. The semiconductor device according to Clause 1,

wherein as viewed in the thickness direction, the first pad portion hasa third edge including a segment extending in the first direction,

the third edge is connected to one of the first end and the second endthat is located between the third end and the fourth end in the seconddirection,

as viewed in the thickness direction, the second pad portion has afourth edge including a segment extending in the first direction, and

the fourth edge is connected to the one of the third end and the fourthend that is located between the first end and the second end in thesecond direction.

Clause 3. The semiconductor device according to Clause 2,

wherein the conductive support member further includes a third lead anda fourth lead,

the third lead has a third pad portion adjacent to the fourth edge inthe second direction and covered by the sealing resin,

the fourth lead has a fourth pad portion adjacent to the third edge inthe second direction and covered by the sealing resin, and

the semiconductor device further comprises:

a first wire connecting the control element and the third pad portion,and

a second wire connecting the driver element and the fourth pad portion.

Clause 4. The semiconductor device according to Clause 3,

wherein the sealing resin has a first side surface and a second sidesurface spaced apart from each other in the first direction,

the first side surface is adjacent to the second pad portion and thethird pad portion,

the second side surface is adjacent to the first pad portion and thefourth pad portion,

the first side surface has a first gate mark having a higher surfaceroughness than another region of the first side surface, and

the second side surface has a second gate mark having a higher surfaceroughness than another region of the second side surface.

Clause 5. The semiconductor device according to Clause 4, wherein theconductive support member is not exposed from the first side surface andthe second side surface.Clause 6. The semiconductor device according to Clause 5, wherein thefirst gate mark and the second gate mark are spaced apart from eachother in the second direction.Clause 7. The semiconductor device according to Clause 5 or 6,

wherein as viewed in the thickness direction, the first pad portion hasa fifth edge including a segment extending in the first direction, thefifth edge being spaced apart from the third edge in the seconddirection and connected to the first edge, and

as viewed in the thickness direction, the second pad portion has a sixthedge including a segment extending in the first direction, the sixthedge being spaced apart from the fourth edge in the second direction andconnected to the second edge.

Clause 8. The semiconductor device according to Clause 7,

wherein as viewed in the thickness direction, the first gate markincludes a region lying between an extended line of the fourth edge andan extended line of the fifth edge in the second direction, and

as viewed in the thickness direction, the second gate mark includes aregion lying between an extended line of the third edge and an extendedline of the sixth edge in the second direction.

Clause 9. The semiconductor device according to Clause 8,

the third edge includes a third-edge connecting portion connected to oneof the first end and the second end,

the third-edge connecting portion is convex toward outside of the firstpad portion,

the fourth edge includes a fourth-edge connecting portion connected toone of the third end and the fourth end, and

the fourth-edge connecting portion is convex toward outside of thesecond pad portion.

Clause 10. The semiconductor device according to Clause 9,

as viewed in the thickness direction, the third pad portion has athird-pad proximate edge extending in the first direction, the third-padproximate edge being a nearest edge of the third pad portion to thefourth edge, and

as viewed in the thickness direction, the fourth pad portion has afourth-pad proximate edge extending in the first direction, thefourth-pad proximate edge being a nearest edge of the fourth pad portionto the third edge.

Clause 11. The semiconductor device according to Clause 10,

wherein as viewed in the thickness direction, the third pad portion hasa third-pad curved edge adjacent to the first gate mark in the firstdirection,

the third-pad curved edge is convex toward the first gate mark,

as viewed in the thickness direction, the fourth pad portion has afourth-pad curved edge adjacent to the second gate mark in the firstdirection, and

the fourth-pad curved edge is convex toward the second gate mark.

Clause 12. The semiconductor device according to Clause 11, wherein theinsulating element is located between the control element and the driverelement in the first direction.Clause 13. The semiconductor device according to Clause 12,

wherein as viewed in the thickness direction, the first wire is offsetoutward from the insulating element, and

as viewed in the thickness direction, the second wire extends across aregion between the third edge and an extended line of the sixth edge inthe second direction.

Clause 14. The semiconductor device according to Clause 12 or 13,

wherein the sealing resin has a third side surface and a fourth sidesurface spaced apart from each other in the second direction,

the first lead has a first terminal portion connected to the first padportion and exposed from the third side surface,

the second lead has a second terminal portion connected to the secondpad portion and exposed from the fourth side surface,

the third lead has a third terminal portion connected to the third padportion and exposed from the third side surface, and

the fourth lead has a fourth terminal portion connected to the fourthpad portion and exposed from the fourth side surface.

Clause 15. The semiconductor device according to Clause 14,

wherein the conductive support member further includes a fifth lead anda sixth lead,

the fifth lead has a fifth pad portion covered by the sealing resin anda fifth terminal portion connected to the fifth pad portion and exposedfrom the third side surface, the fifth terminal portion being locatedbetween the first terminal portion and the third terminal portion,

the sixth lead has a sixth pad portion covered by the sealing resin anda sixth terminal portion connected to the sixth pad portion an exposedfrom the fourth side surface, the sixth terminal portion being locatedbetween the second terminal portion and the fourth terminal portion,

each of the fifth pad portion and the sixth pad portion has a throughhole extending in the thickness direction, and

a portion of the sealing resin is present in each of the through holes.

1-15. (canceled)
 16. A semiconductor device comprising: a conductivesupport member including: a first lead having a first pad portion; asecond lead having a second pad portion adjacent to the first padportion in a first direction perpendicular to a thickness direction ofthe first lead; a third lead facing the second pad portion in a seconddirection perpendicular to the thickness direction and the firstdirection; a fourth lead facing the first pad portion in the seconddirection); a fifth lead adjacent to the first lead in the firstdirection; a sixth lead adjacent to the second lead in the firstdirection; a seventh lead disposed between the third lead and the fifthlead in the first direction; and an eighth lead disposed between thefourth lead and the sixth lead in the first direction; an firstelectronic functional chip mounted on the first pad portion; a secondelectronic functional chip mounted on the second pad portion; and asealing resin covering at least the first pad portion, the second padportion, the first electronic functional chip, and the second electronicfunctional chip, wherein, as viewed in the thickness direction, thefirst pad portion has a first edge adjacent to the second pad portion inthe first direction and extending in the second direction, the firstedge has a first end and a second end that are opposite in the seconddirection, as viewed in the thickness direction, the second pad portionhas a second edge adjacent to the first edge in the first direction andextending in the second direction, the second edge has a third end and afourth end that are opposite in the second direction, one of the thirdend and the fourth end is located between the first end and the secondend in the second direction, the fifth lead and the seventh lead includea fifth inner portion and a seventh inner portion, respectively, thatare covered by the sealing resin, each of the fifth and the seventhinner portions having a first edge inclined relative to the firstdirection and the second direction, the sixth lead and the eighth leadinclude a sixth inner portion and an eighth inner portion, respectively,that are covered by the sealing resin, each of the sixth and the eightinner portions having a first edge inclined relative to the firstdirection and the second direction, the fifth inner portion has a secondedge and a third edge other than the first edge thereof, the second edgeand the third edge of the fifth inner portion being connected to eachother and disposed to face the first lead, and the sixth inner portionhas a second edge and a third edge other than the first edge thereof,the second edge and the third edge of the sixth inner portion beingconnected to each other and disposed to face the second lead.
 17. Thesemiconductor device according to claim 16, wherein, as viewed in thethickness direction, the first pad portion has a third edge including asegment extending in the first direction, the third edge is connected toone of the first end and the second end that is located between thethird end and the fourth end in the second direction, as viewed in thethickness direction, the second pad portion has a fourth edge includinga segment extending in the first direction, and the fourth edge isconnected to the one of the third end and the fourth end that is locatedbetween the first end and the second end in the second direction. 18.The semiconductor device according to claim 17, wherein the third leadhas a third pad portion adjacent to the fourth edge in the seconddirection and covered by the sealing resin, the fourth lead has a fourthpad portion adjacent to the third edge in the second direction andcovered by the sealing resin, and the semiconductor device furthercomprises: a first wire connecting the first electronic functional chipand the third pad portion, and a second wire connecting the secondelectronic functional chip and the fourth pad portion.
 19. Thesemiconductor device according to claim 18, wherein the sealing resinhas a first side surface and a second side surface spaced apart fromeach other in the first direction, the first side surface is adjacent tothe second pad portion and the third pad portion, the second sidesurface is adjacent to the first pad portion and the fourth pad portion,the first side surface has a first gate mark having a higher surfaceroughness than another region of the first side surface, and the secondside surface has a second gate mark having a higher surface roughnessthan another region of the second side surface.
 20. The semiconductordevice according to claim 19, wherein the conductive support member isnot exposed from the first side surface and the second side surface. 21.The semiconductor device according to claim 20, wherein the first gatemark and the second gate mark are spaced apart from each other in thesecond direction.
 22. The semiconductor device according to claim 20,wherein, as viewed in the thickness direction, the first pad portion hasa fifth edge including a segment extending in the first direction, thefifth edge being spaced apart from the third edge in the seconddirection and connected to the first edge, and as viewed in thethickness direction, the second pad portion has a sixth edge including asegment extending in the first direction, the sixth edge being spacedapart from the fourth edge in the second direction and connected to thesecond edge.
 23. The semiconductor device according to claim 22,wherein, as viewed in the thickness direction, the first gate markincludes a region lying between an extended line of the fourth edge andan extended line of the fifth edge in the second direction, and asviewed in the thickness direction, the second gate mark includes aregion lying between an extended line of the third edge and an extendedline of the sixth edge in the second direction.
 24. The semiconductordevice according to claim 23, the third edge includes a third-edgeconnecting portion connected to one of the first end and the second end,the third-edge connecting portion is convex toward outside of the firstpad portion, the fourth edge includes a fourth-edge connecting portionconnected to one of the third end and the fourth end, and thefourth-edge connecting portion is convex toward outside of the secondpad portion.
 25. The semiconductor device according to claim 24,wherein, as viewed in the thickness direction, the third pad portion hasa third-pad proximate edge extending in the first direction, thethird-pad proximate edge being a nearest edge of the third pad portionto the fourth edge, and as viewed in the thickness direction, the fourthpad portion has a fourth-pad proximate edge extending in the firstdirection, the fourth-pad proximate edge being a nearest edge of thefourth pad portion to the third edge.
 26. The semiconductor deviceaccording to claim 25, wherein, as viewed in the thickness direction,the third pad portion has a third-pad curved edge adjacent to the firstgate mark in the first direction, the third-pad curved edge is convextoward the first gate mark, as viewed in the thickness direction, thefourth pad portion has a fourth-pad curved edge adjacent to the secondgate mark in the first direction, and the fourth-pad curved edge isconvex toward the second gate mark.
 27. The semiconductor deviceaccording to claim 26, further comprising an insulating element mountedon the first pad portion and electrically connected to the firstelectronic functional chip, wherein the insulating element is locatedbetween the first electronic functional chip and the second electronicfunctional chip in the first direction.
 28. The semiconductor deviceaccording to claim 27, wherein, as viewed in the thickness direction,the first wire is offset outward from the insulating element, and asviewed in the thickness direction, the second wire extends across aregion between the third edge and an extended line of the sixth edge inthe second direction.
 29. The semiconductor device according to claim27, wherein the sealing resin has a third side surface and a fourth sidesurface spaced apart from each other in the second direction, the firstlead has a first terminal portion connected to the first pad portion andexposed from the third side surface, the second lead has a secondterminal portion connected to the second pad portion and exposed fromthe fourth side surface, the third lead has a third terminal portionconnected to the third pad portion and exposed from the third sidesurface, and the fourth lead has a fourth terminal portion connected tothe fourth pad portion and exposed from the fourth side surface.
 30. Thesemiconductor device according to claim 29, wherein the fifth lead has afifth pad portion covered by the sealing resin and a fifth terminalportion connected to the fifth pad portion and exposed from the thirdside surface, the fifth terminal portion being located between the firstterminal portion and the third terminal portion, the sixth lead has asixth pad portion covered by the sealing resin and a sixth terminalportion connected to the sixth pad portion and exposed from the fourthside surface, the sixth terminal portion being located between thesecond terminal portion and the fourth terminal portion, each of thefifth pad portion and the sixth pad portion has a through hole extendingin the thickness direction, and a portion of the sealing resin ispresent in each of the through holes.